RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

Name: RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
Brand: MITSUBISHI
Price: 1 USD

Brand Name : MITSUBISHI

Model Number : RD06HVF1

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 50pcs

Price : negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 day

Packaging Details : please contact me for details

Drain to source voltage : 50 V

Gate to source voltage : +/- 20 V

Channel dissipation : 27.8 W

Input power : 0.6 W

Drain current : 3 A

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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.

RoHS COMPLIANT

RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.

This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

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Product Tags:

multi emitter transistor

silicon power transistors

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