2SA1412 Power Mosfet Transistor SILICON POWER TRANSISTOR

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SILICON POWER TRANSISTOR 2SA1412-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

DESCRIPTION

The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.

FEATURES

• High Voltage: VCEO = −400 V

• High Speed: tf ≤ 0.7 μs

• Complement to 2SC3631-Z

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C)

Collector to base voltage V_CBO −400 V

Collector to emitter voltage V_CEO −400 V

Base to emitter voltage V_EBO −7 V

Collector current (DC) I_C(DC) −2.0 A

Collector current (pulse) ^{Note 1} I_C(pulse) −4.0 A

Total power dissipation (TA = 25°C) ^{Note 2} P_T 2.0 W

Junction temperature T_j 150 °C

Storage temperature T_stg −55 to +150 °C

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm

PACKAGE DRAWING (Unit: mm)

multi emitter transistor

silicon power transistors

2SA1412 Power Mosfet Transistor SILICON POWER TRANSISTOR Images