STMPS2272MTR Enhanced Power Switch High Speed Switching Diode

STMPS2272MTR Enhanced Power Switch High Speed Switching Diode

Features

■ 80mΩ HIGH-SIDE MOSFET SWITCH

■ 1000mA CONTINUOUS CURRENT PER CHANNEL

■ INDEPENDENT THERMAL AND SHORTCIRCUIT PROTECTION WITH OVERCURRENT LOGIC OUTPUT

■ OPERATING RANGE FROM 2.7V TO 5.5V

■ 2.5ms TYPICAL RISE TIME

■ UNDERVOLTAGE LOCKOUT

■ 10µA MAXIMUM STANDBY SUPPLY CURRENT

■ AMBIENT TEMPERATURE RANGE, 0°C TO 85°C

■ 8kV ESD PROTECTION

■ REVERSE CURRENT PROTECTION

■ FAULT-BLANKING

Description These devices power distribution switches are intended for application where heavy capacitive loads and short circuits are likely to be encountered. These devices incorporate 80mΩ Nchannel MOSFET high-side power switches for power-distribution systems that require multiple powers switches in a single package. Each switch is controlled by an independent logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching.

The charge pump requires no external components and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit threshold or a short is present, these devices limit the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch remains off until valid input voltage is present.

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STMPS2272MTR Enhanced Power Switch High Speed Switching Diode Images