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AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

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AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

Brand Name : AOSMD

Model Number : AO4449

Certification : Original Factory Pack

Place of Origin : brand new

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

VDS (V : -30V

ID : -7 A (VGS = -10V)

RDS(ON) : < 54mΩ (VGS = -4.5V)

TLEAD : 260 0 C

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P-Channel Enhancement Mode Field Effect Transistor

AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

Features

VDS (V) = -30V

ID = -7 A (VGS = -10V)

RDS(ON) < 34mΩ (VGS = -10V)

RDS(ON) < 54mΩ (VGS = -4.5V)

General Description

The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications).

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

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multi emitter transistor

      
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